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FSYC9160R Datasheet, Intersil Corporation

FSYC9160R Datasheet, Intersil Corporation

FSYC9160R

datasheet Download (Size : 61.45KB)

FSYC9160R Datasheet

FSYC9160R mosfets

radiation hardened/ segr resistant p-channel power mosfets.

radiation hardened/ segr resistant p-channel power mosfets.

FSYC9160R

datasheet Download (Size : 61.45KB)

FSYC9160R Datasheet

FSYC9160R Features and benefits

FSYC9160R Features and benefits


* 47A, -100V, rDS(ON) = 0.053Ω
* Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
* Single Event - Safe Operating Area Curve for Single Event Effects.

FSYC9160R Application

FSYC9160R Application

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin.

FSYC9160R Description

FSYC9160R Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupt.

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TAGS

FSYC9160R
Radiation
Hardened
SEGR
Resistant
P-Channel
Power
MOSFETs
Intersil Corporation

Manufacturer


Intersil Corporation

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